phase shifters - digital - chip 3 3 - 20 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com hmc643 gaas mmic 6-bit digital phase shifter, 9 - 12 ghz v01.0707 general description features functional diagram the hmc643 is a 6-bit digital phase shifter die which is rated from 9 to 12 ghz, providing 360 degrees of phase coverage, with a lsb of 5.625 degrees. the hmc643 features very low rms phase error of 3.5 degrees and extremely low insertion loss variation of 0.6 db across all phase states. this high accuracy phase shifter is controlled with complementary logic of 0/-3v, and requires no xed bias voltage and is internally matched to 50 ohms with no external components. simple external level shifting circuitry can be used to convert a positive cmos control voltage into complementary negative control signals. low rms phase error: 3.5 low insertion loss: 6.5 db high linearity: +38 dbm 360 coverage, lsb = 5.625 die size: 2.75 x 0.99 x 0.1 mm electrical speci cations, t a = +25 c, 50 ohm system, control voltage = 0/-3v typical applications the hmc643 is ideal for: ? ew receivers ? weather & military radar ? satellite communications ? beamforming modules ? phase cancellation parameter min. typ. max. units frequency range 9 12 ghz insertion loss* 6.5 10.0 db input return loss* 15 db output return loss* 12 db phase error* 7 -10 / +15 deg rms phase error 3.5 deg insertion loss variation* 0.6 db input power for 1 db compression 22 dbm input third order intercept 38 dbm control voltage current <1 a *note: major states shown
phase shifters - digital - chip 3 3 - 21 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com gaas mmic 6-bit digital phase shifter, 9 - 12 ghz v01.0707 hmc643 insertion loss, major states only normalized loss, major states only phase error, major states only input return loss, major states only output return loss, major states only -12 -10 -8 -6 -4 -2 0 8 9 10 11 12 13 insertion loss (db) frequency (ghz) -4 -3 -2 -1 0 1 2 3 4 8 9 10 11 12 13 normalized loss (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 8 9 10 11 12 13 return loss (db) frequency (ghz) 0 50 100 150 200 250 300 350 400 8 9 10 11 12 13 relative phase shift (degrees) frequency (ghz) -30 -25 -20 -15 -10 -5 0 8 9 10 11 12 13 return loss (db) frequency (ghz) -20 -15 -10 -5 0 5 10 15 20 8 9 10 11 12 13 phase error (degrees) frequency (ghz) relative phase shift major states, including all bits
phase shifters - digital - chip 3 3 - 22 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com relative phase shift, rms, average, max, all states input ip3, major states only input ip2, major states only input p1db, major states only rms phase error vs. temperature insertion loss vs. temperature, major states only gaas mmic 6-bit digital phase shifter, 9 - 12 ghz v01.0707 hmc643 -10 -5 0 5 10 15 20 25 30 9 9.5 10 10.5 11 11.5 12 rms average max relative phase shift (degrees) frequency (ghz) 10 15 20 25 30 35 40 9 9.5 10 10.5 11 11.5 12 p1db (dbm) frequency (ghz) 50 60 70 80 90 100 9 9.5 10 10.5 11 11.5 12 ip2 (dbm) frequency (ghz) 25 30 35 40 45 50 55 9 9.5 10 10.5 11 11.5 12 ip3 (dbm) frequency (ghz) -10 -8 -6 -4 -2 0 9 9.5 10 10.5 11 11.5 12 insertion loss (db) frequency (ghz) -10 -5 0 5 10 15 20 9 9.5 10 10.5 11 11.5 12 +25c +85c -55c relative phase shift (degrees) frequency (ghz)
phase shifters - digital - chip 3 3 - 23 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com absolute maximum ratings input power (rfin) 27 dbm (t= +85 c) channel temperature (tc) 150 c thermal resistance (channel to die bottom) 130 c/w storage temperature -65 to +150 c operating temperature -55 to +85 c electrostatic sensitive device observe handling precautions truth table control voltage state bias condition low (0) -2.5 to -3.5v @ 0.4 a typ. high (1) 0 to +0.3v @ 0.4 a typ. control voltage input phase shift (degrees) rfin - rfout bit 1 bit 2 bit 3 bit 3 bit 4 bit 4 bit 5 bit 5 bit 6 bit 6 0001010101reference* 1001010101 5.625 0101010101 11.25 0010010101 22.5 0001100101 45.0 0001011001 90.0 0001010110 180.0 1110101010 354.375 any combination of the above states will provide a phase shift approximately equal to the sum of the bits selected. *reference corresponds to monotonic setting phase error vs. state gaas mmic 6-bit digital phase shifter, 9 - 12 ghz v01.0707 hmc643 -20 -15 -10 -5 0 5 10 15 20 0 45 90 135 180 225 270 315 360 phase error (degrees) state (degrees) 9 ghz 9.5, 10, 10.5, 11, 11.5, 12 ghz pad number function description interface schematic 1, 3, 4, 6 gnd these pads and die bottom must be connected to rf/dc ground. 2 rfin this port is dc coupled and matched to 50 ohms. 5 rfout this port is dc coupled and matched to 50 ohms. 7, 9, 11, 15 bit6, bit4 bit3, bit5 inverted control input. see truth table and control voltage tables. 8, 10, 12, 13, 14, 16 bit6, bit4, bit3, bit2, bit1, bit5 non-inverted control input. see truth table and control voltage tables. pad descriptions
phase shifters - digital - chip 3 3 - 24 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com outline drawing die packaging information [1] standard alternate gp-2 (gel pack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation. gaas mmic 6-bit digital phase shifter, 9 - 12 ghz v01.0707 hmc643 application circuit note: this circuit converts a single line positive (0/+5v) control signal to complementary negative (0/-3v) control signals. notes: 1. all dimensions in inches (millimeters) 2. die thickness is 0.004 3. backside metallization: gold 4. backside metal is ground 5. bond pads metallization: gold 6. overall die size 0.002
phase shifters - digital - chip 3 3 - 25 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com gaas mmic 6-bit digital phase shifter, 9 - 12 ghz v01.0707 hmc643 handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waffle or gel based esd protective containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. static sensitivity: follow esd precautions to protect against > 250v esd strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or ngers. mounting the chip is back-metallized and can be die mounted with electrically conductive epoxy. the mounting surface should be clean and at. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. thermosonic wirebonding with a nominal stage temperature of 150 deg. c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. use the minimum level of ultrasonic energy to achieve reliable wirebonds. wirebonds should be started on the chip and terminated on the package or substrate. all bonds should be as short as possible <0.31mm (12 mils). assembly diagram
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